Thickness effect on pinning properties for GdBa2Cu3O7-x films deposited with RF sputtering

Abstract

Abstract We studied the relationship between JC and H, direction and crystallization orientation of GBCO films grown by RF sputtering with different thickness which is 0.3 um, 0.5um and 0.9um respectively. By de-convoluting the random pinning from the correlated pinning contributions, we find that all the three films exhibit a lower effective anisotropy parameter γ = 3 rather than γ = 5 in YBCO films. The thinnest film is the most anisotropic. The anisotropic scaling analysis reveals an enhanced random pinning for thick film the whole range of angles studied in the angle correlation Jc curve. The Jc-thickness dependence analysis indicates that there is a certain threshold field Hd and a certain thickness d for magnetic decoupling.