The Peculiarities of Halogens Adsorption on A3B5(001) Surface
Author:
Publisher
IOP Publishing
Subject
General Medicine
Link
http://stacks.iop.org/1757-899X/77/i=1/a=012002/pdf
Reference14 articles.
1. FUNDAMENTAL STUDIES OF HALOGEN REACTIONS WITH III-V SEMICONDUCTOR SURFACES
2. Reactions ofI2andCl2with In- and As-terminated InAs(001)
3. Adsorption of halogen atom (F, Cl, I) on cation-rich GaAs(001) surface
4. Early Stages of Halogen Adsorption on Cation-Rich InAs(001): Surface Etching Mechanism
5. Fluorine, chlorine and iodine adsorption on the Ge(001) surface: Comparative study for the coverage of 0.75 and 1 monolayer
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1. Role of Oxygen and Fluorine in Passivation of the GaSb(111) Surface Depending on Its Termination;Crystals;2022-03-30
2. Industrial mass production of novel mixed-halide Cs3Cu2Cl5-xIx and Cs5Cu3Cl8-xIx compounds with greatly enhanced stability and luminescent efficiency by compositional engineering;Chemical Engineering Journal;2021-08
3. Effect of Oxygen and Fluorine Absorption on the Electronic Structure of the InSb(111) Surface;Semiconductors;2020-01
4. Halogen diffusion on a Ga-stabilized ζ-GaAs(001)–(4 × 2) surface;Semiconductors;2016-09
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