Thermomechanical Study and Fracture Properties of Silicon Wafer under Effect of Crystal Orientation

Abstract

Abstract Designing and optimizing the performance of a piezoresistive pressure microsensor involves not only studying the piezoresistive properties of polysilicon but also analyse the thermomechanical behaviour of its most sensitive internal part. This work focuses on an analytical, numerical and experimental study of a silicon wafer used in a pressure sensor. A thermomechanical study was conducted to assess the effects of temperature and material orientation on the deflexion and failure mode of Silicon membrane. The chosen analytical approach is based on Kirchhoff theory in which a square Silicon membrane is subjected to a distributed pressure over all its surface. Thermomechanical simulations and fracture analysis are carried out using Abaqus software. An experimental thermomechanical technique to determine maximum wafer deflexion and its effect on crack initiation and fracture mode was implemented. Deflexions tests were carried out on a bending machine using specimens of p-Si doped wafers. Deflexion values are measured for each applied temperature. Some preliminary tests were performed to determine the impact of temperature and Silicon wafers orientation on maximum deflexion when fracture occurs. The test’s results confirmed that the failure mode is highly brittle and follow each time crystal orientations 0° and 45°. Furthermore, at room temperature, fracture occur at 389 μm of displacement, and grows by 5.2 % when temperature is increased over 40°C. Consequently, Silicon sensitivity will be increased by 4%.