Structural and electrical properties of Dy and Ta co-substituted (Hf, Zr)O2 ceramics as a novel high-k dielectric for logic and memory devices
Author:
Publisher
IOP Publishing
Subject
General Medicine
Link
https://iopscience.iop.org/article/10.1088/1757-899X/872/1/012145/pdf
Reference10 articles.
1. Thin films of high- dysprosium scandate prepared by metal organic chemical vapor deposition for metal–insulator–metal capacitor applications
2. High-κ dielectric breakdown in nanoscale logic devices – Scientific insight and technology impact
3. Metalorganic chemical vapor deposited buffer layer in metal–ferroelectric–insulator–semiconductor diodes
4. Oxides, Oxides, and More Oxides: High-κ Oxides, Ferroelectrics, Ferromagnetics, and Multiferroics
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1. Pulsed laser deposited Dy and Ta doped hafnium- zirconium oxide thin films for the high-k applications;Physica Scripta;2023-04-21
2. Morphological and electrical studies of Hf0.5Zr0.5O2 electroceramics;THE FOURTH SCIENTIFIC CONFERENCE FOR ELECTRICAL ENGINEERING TECHNIQUES RESEARCH (EETR2022);2023
3. Structural and Electrical Properties of Dy3+ and Ta5+ Co-Substituted (Hf, Zr)O2 Ceramics for Logic Devices;Journal of Electronic Materials;2022-11-05
4. Recent Progress of Rare Earth Oxides for Sensor, Detector, and Electronic Device Applications: A Review;ACS Applied Electronic Materials;2021-10-11
5. Refined analysis of C–V and I–V characteristics of Al/dielectric/Si structures containing nanosized Ta2O5/SiOxNy dielectric stack;Journal of Physics D: Applied Physics;2020-11-10
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