Study on the Film of Ti-Si-C-O Oxides and Its Application in Memristor

Abstract

Abstract The thin films of Ti-Si-C-O oxides are fabricated via direct-current magnetron co-sputtering using a Ti3SiC2 target with oxygen (O2). The X-ray photoelectron spectroscopy is used to verified the composition of the Ti-Si-C-O thin films. A memristor is designed as the structure of Pt/TSCO/ITO/glass, and the I-V curves as well as the switching behaviors are studied for the first time. The results indicated that there appear typical pinched hysteresis I-V loops and continuous resistance changes under positive and negative sweeping bias, and that the device conductance can be modulated by consecutive potentiating and depressing programming. The carrier transport mechanism of the device is also investigated and it is found that the Ohmic connection is the leading factor in the linear low electric field region while Schottky emission in the non-liner high electric field region.