Effect of the active mode NMOS-transistor irradiated on formation of surface defects
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Published:2019-04-16
Issue:
Volume:498
Page:012016
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ISSN:1757-899X
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Container-title:IOP Conference Series: Materials Science and Engineering
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language:
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Short-container-title:IOP Conf. Ser.: Mater. Sci. Eng.
Author:
Petukhov K A,Popov V D