Temperature influence on process of Ti/Al/Ni/Au contact formation to heterostructure AlGaN/GaN-Reference-Cited by-同舟云学术

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Temperature influence on process of Ti/Al/Ni/Au contact formation to heterostructure AlGaN/GaN

Published:2019-04-16 Issue: Volume:498 Page:012019
ISSN:1757-899X
Container-title:IOP Conference Series: Materials Science and Engineering
language:
Short-container-title:IOP Conf. Ser.: Mater. Sci. Eng.

Author:

Shostachenko S A,Porokhonko Y A,Zakharchenko R V,Leshchev S V,Maslov M M,Katin K P

Publisher

IOP Publishing

Subject

General Medicine

Link

http://stacks.iop.org/1757-899X/498/i=1/a=012019/pdf

Reference11 articles.

1. Investigation of the mechanism for Ohmic contact formation in Al and Ti/Al contacts ton-type GaN

2. Role of Ti/Al relative thickness in the formation mechanism of Ti/Al/Ni/Au Ohmic contacts to AlGaN/GaN heterostructures

3. Microstructural stability of ohmic contacts to InxGa1−xN

4. Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Machine Learning-Assisted Model for GaN Ohmic Contacts Regarding the Fabrication Processes;IEEE Transactions on Electron Devices;2021-05

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