Author:
Zhelannov A V,Seleznev B I,Fedorov D G
Abstract
Abstract
The technologies of plasma-chemical etching of AlxGa1-xN epitaxial layers in chlo-rine-containing mixtures, which allow forming a microrelief on the surface of a semiconductor in the range from tens of nanometers to tens of micrometers, are presented. The modes of selective etching of GaN layers with respect to AlxGa1-xN (x = 0.25) are determined.
Cited by
1 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献