Structure design of InGaAs quantum well laser with mode expansion layer Lei

Abstract

Abstract InGaAs quantum well (QW) is grown on GaAs substrates by metal-organic chemical vapor deposition (MOCVD). The effects of growth temperature and V/III ratio on the optical properties are discussed by analyzing the photoluminescence(PL) measurement at room temperature. It is found that the PL intensity of the QWs grown at low temperature is stronger, and the luminescence intensity of the samples can be increased by increasing the V/III ratio of the QW. Crosslight software is used to simulate the laser structure with mode expansion layers. Compared with conventional lasers, it’s demonstrated that inducing the mode expansion layer would expand the near-field, reduce the confinement factor, improve the catastrophic optical damage (COD) threshold of the laser, and reduce the vertical divergence angle of the far-field.