Cryogenic Performances Comparisons Among Si MOSFET, SiC MOSFET, Cascode GaN, and GaN Devices

Abstract

Abstract Cryogenic power electronics is an emerging technology to achieve high efficiency and high power density. As the key element of the power electronics system, the device performance should be evaluated under cryogenic temperatures. To demonstrate the differences between different materials and technologies, cryogenic temperature performance comparisons among silicon (Si) metal–oxide–semiconductor field-effect transistor (MOSFET), Si insulated-gate bipolar transistor (IGBT), silicon carbide (SiC) MOSFET, Cascode gallium nitride (GaN), and GaN high-electron-mobility transistor (HEMT) from different perspectives are made, which includes on-state resistance, threshold voltage, turn-on and turn-off times, turn-on and turn-off switching losses. The normalized values are adopted and results are drawn in the same pictures to demonstrate the differences. The results demonstrate that traditional Si devices have better performances under low temperatures. The SiC MOSFET is not suitable for cryogenic applications due to its increased on-state resistance and switching loss. Cascode GaN and GaN HEMT are promising candidates for cryogenic applications with reduced conduction loss and switching loss.