Study on Optical Properties and Waveguide Structure Optimization of Semiconductor Lasers with InGaAs Quantum Well-Reference-Cited by-同舟云学术

Study on Optical Properties and Waveguide Structure Optimization of Semiconductor Lasers with InGaAs Quantum Well

Published:2020-01-01 Issue:1 Volume:729 Page:012104
ISSN:1757-8981
Container-title:IOP Conference Series: Materials Science and Engineering
language:
Short-container-title:IOP Conf. Ser.: Mater. Sci. Eng.

Author:

Gu Lei,Li Lin

Abstract

Abstract InGaAs quantum wells (QWs) are grown on GaAs substrates by metal-organic chemieal vapor deposition (MOCVD). Sample grown on substrates (100) oriented 2° off towards <111> exhibits relatively high photoluminescence (PL) intensity and narrow full-width at half-maximum (FWHM). Increasing growth rate leads to the enhancement of PL intensity and decrease of FWHM. Asymmetric waveguide layers are applied to reduce the confinement factor of base mode and increase the loss of higher-order mode.

Publisher

IOP Publishing

Subject

General Medicine

Link

https://iopscience.iop.org/article/10.1088/1757-899X/729/1/012104/pdf

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