A photoluminescence study of acceptor centres in gallium arsenide-Reference-Cited by-同舟云学术

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A photoluminescence study of acceptor centres in gallium arsenide

Published:1967-03 Issue:3 Volume:18 Page:253-262
ISSN:0508-3443
Container-title:British Journal of Applied Physics
language:
Short-container-title:Br. J. Appl. Phys.

Author:

Williams E W

Publisher

IOP Publishing

Subject

General Engineering

Link

https://iopscience.iop.org/article/10.1088/0508-3443/18/3/301/pdf

Reference24 articles.

1. Hall Effect and Resistivity of Zn‐Doped GaAs

2. The Optical Absorption of Gallium Arsenide in the Reststrahlen Band

3. Solubility and ionization energy of Cu, and hole mobility in Cu diffused GaAs

4. Determination of the Effective Ionic Charge of Gallium Arsenide from Direct Measurements of the Dielectric Constant

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2. Electroluminescence studies of (Ga,Mn)As-based p-i-n structures;Journal of Applied Physics;2007-09

3. Investigation of nitrogen-related acceptor centers in indium selenide by means of photoluminescence: Determination of the hole effective mass;Physical Review B;1997-03-15

4. Deep emission band at GaInP/GaAs interface;Journal of Applied Physics;1997-01-15

5. The Formation of Radiative Defects at GaAs/GaInP Interface;MRS Proceedings;1995

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