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The silicon-germanium n-p heterojunction

Published:1964-11 Issue:11 Volume:15 Page:1331-1340
ISSN:0508-3443
Container-title:British Journal of Applied Physics
language:
Short-container-title:Br. J. Appl. Phys.

Author:

Hampshire M J,Wright G T

Publisher

IOP Publishing

Subject

General Engineering

Link

https://iopscience.iop.org/article/10.1088/0508-3443/15/11/311/pdf

Reference12 articles.

1. Germanium-Gallium Arsenide Heterojunctions [Letter to the Editor]

2. Characteristics of the dielectric diode and triode at very high frequencies

3. Fine Structure in the Absorption-Edge Spectrum of Ge

Cited by 27 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Is Hopping a Science?;2015-02-05

2. High Doping Density/High Electric Field, Stress and Heterojunction Effects on the Characteristics of CMOS Compatible p-n Junctions;Journal of The Electrochemical Society;2011

3. Structural and Electrical Properties of Low Temperature Direct Bonded Germanium to Silicon Wafer for Photodetector Applications;ECS Transactions;2010-10-01

4. On the frequency dispersion of the capacitance-voltage behavior of epitaxial Ge on Si p+-n junctions;Journal of Applied Physics;2009-10

5. Photosensitivity of the capacitance of aSiCx:H/P+PcSi heterojunctions;Solid-State Electronics;1989-05

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