Structural and Electrical Properties of Low Temperature Direct Bonded Germanium to Silicon Wafer for Photodetector Applications
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Published:2010-10-01
Issue:4
Volume:33
Page:161-168
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ISSN:1938-5862
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Container-title:ECS Transactions
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language:
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Short-container-title:ECS Trans.
Author:
Yu Ran,Byun Ki Yeol,Gity Farzan,Hayes John,Ferain Isabelle,Colinge C.,Corbett Brian
Abstract
A Ge/Si heterostructure with an ultra-thin transition layer was fabricated at low temperature by direct bonding. In-situ oxygen or nitrogen radical activation was performed after hydrophilic cleaning on both Germanium and Silicon surfaces. The interfacial structure was analyzed by Scanning Acoustic Microscopy (SAM) and High-Resolution Transmission Electron Microscopy (HR-TEM). The samples were diced into mesa structures and electrical properties at different locations were measured in order to characterize the quality of the bonded heterostructure.
Publisher
The Electrochemical Society