Random population model to explain the recombination dynamics in single InAs/GaAs quantum dots under selective optical pumping-Reference-Cited by-同舟云学术

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Random population model to explain the recombination dynamics in single InAs/GaAs quantum dots under selective optical pumping

Published:2011-02-09 Issue:2 Volume:13 Page:023022
ISSN:1367-2630
Container-title:New Journal of Physics
language:
Short-container-title:New J. Phys.

Author:

Gomis-Bresco Jordi,Muñoz-Matutano Guillermo,Martínez-Pastor Juan,Alén Benito,Seravalli Luca,Frigeri Paola,Trevisi Giovanna,Franchi Secondo

Publisher

IOP Publishing

Subject

General Physics and Astronomy

Reference18 articles.

1. Optical emission from a charge-tunable quantum ring

2. Theory of random population for quantum dots

3. Poissonian statistics of excitonic complexes in quantum dots

4. Acceptor-induced threshold energy for the optical charging of InAs single quantum dots

5. Optical control of the exciton charge states of single quantum dots via impurity levels

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1. Theoretical Study on Vertically Coupled Stranski-Krastanov (SK) on Sub Monolayer (SML) InAs Quantum Dot Heterostructures Employing Ternary and Quaternary Barrier Materials;IEEE Transactions on Nanotechnology;2023

2. Hot Phonon Bottleneck Stimulates Giant Optical Gain in Lead Halide Perovskite Quantum Dots;ACS Photonics;2022-09-29

3. Metamorphic InAs/InAlAs/InGaAs quantum dots: Establishing the limit for indium composition in InGaAs buffers;Microelectronic Engineering;2022-07

4. Exciton generation and recombination dynamics of quantum dots embedded in GaNAsP nanowires;Physical Review B;2021-04-26

5. All optical switching of a single photon stream by excitonic depletion;Communications Physics;2020-01-31

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