Removing the orientational degeneracy of the TS defect in 4H–SiC by electric fields and strain

Abstract

Abstract We present a photoluminescence (PL) study of the recently discovered TS defect in 4H silicon carbide. It investigates the influence of static electric fields and local strain on the spectral properties by means of low temperature (≈4 K) ensemble measurements. Upon application of static electric fields exerted by graphene electrodes, line splitting patterns are observed, which are investigated for four different angles of the electric field with respect to the principal crystallographic axes. More detailed information can be gained when additionally the excitation polarization angle is systematically varied. Altogether, the data allow for extracting the direction of the associated electric dipole moments, revealing three distinct orientations of the underlying TS defect inside the crystal’s basal plane. We also present three so far unreported PL lines (836.7 nm, 889.7 nm, 950.0 nm) as candidates for out-of-plane oriented counterparts of the TS lines. Similar to symmetry breaking by the electric field applied, strain can reduce the local symmetry. We investigate strain-induced line splitting patterns that also yield a threefold directedness of the TS lines in accordance with the Stark effect measurements. The response to both electrical and strain fields is remarkably strong, leading to line shifts of ±12 meV of the TS1 line. Combining our findings, we can narrow down possible geometries of the TS defect.