Quantum dots in Si/SiGe 2DEGs with Schottky top-gated leads-Reference-Cited by-同舟云学术

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Quantum dots in Si/SiGe 2DEGs with Schottky top-gated leads

Published:2005-11-29 Issue: Volume:7 Page:246-246
ISSN:1367-2630
Container-title:New Journal of Physics
language:
Short-container-title:New J. Phys.

Author:

Slinker K A,Lewis K L M,Haselby C C,Goswami S,Klein L J,Chu J O,Coppersmith S N,Joynt Robert,Blick R H,Friesen Mark,Eriksson M A

Publisher

IOP Publishing

Subject

General Physics and Astronomy

Reference33 articles.

1. Electron spin relaxation times of phosphorus donors in silicon

2. ESR studies of the Bychkov–Rashba field in modulation doped Si/SiGe quantum wells

3. Microwave Spin Echoes from Donor Electrons in Silicon

4. Electron Spin Resonance Experiments on Donors in Silicon. I. Electronic Structure of Donors by the Electron Nuclear Double Resonance Technique

5. Electron Spin Resonance Experiments on Donors in Silicon. II. Electron Spin Relaxation Effects

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2. Magnetotransport studies of mobility limiting mechanisms in undoped Si/SiGe heterostructures;Physical Review B;2015-07-16

3. Noise-compensating pulses for electrostatically controlled silicon spin qubits;Physical Review B;2014-10-14

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