Fabrication of a GaAs/GaNAsBi solar cell and its performance improvement by thermal annealing
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
https://iopscience.iop.org/article/10.1088/1361-6641/ac13af/pdf
Reference46 articles.
1. New Semiconductor GaNAsBi Alloy Grown by Molecular Beam Epitaxy
2. Molecular-beam epitaxy and characteristics of GaNyAs1−x−yBix
3. The potential of GaAsBiN for multi-junction solar cells
4. Optimizing the performance of a solar cell based on new materials
5. 1-eV solar cells with GaInNAs active layer
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1. MOVPE growth and characterization of GaAs/GaAsBi/GaAs p-i-n structure;Optical Materials;2024-09
2. Magnetothermal properties of two-dimensional electron gas in matched AlGaAs/GaABiN structure;Applied Physics A;2024-04-16
3. Onset of tetrahedral interstitial formation in GaAsN alloys;Applied Physics Letters;2024-04-15
4. Low bandgap GaAsNBi solar cells;Solar Energy Materials and Solar Cells;2024-01
5. Influence of Bi and N contents and dot radius on optoelectronic and diamagnetic properties of GaNAsBi strained quantum dot excitons;Materials Science in Semiconductor Processing;2024-01
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