Packaging and high-temperature characterization of a 650 V, 150 A eGaN HEMT

Author:

Lu ShengchangORCID,Burgos Rolando,Lu Guo-Quan

Abstract

Abstract Among the salient features of gallium nitride (GaN) power semiconductor devices is their high-temperature capability. However, commercial GaN devices, such as the high-electron-mobility transistors (HEMTs), are limited to 125 °C junction-temperature operation because of their packaging. To explore the high-temperature capability of GaN power devices, a commercial 650 V, 150 A enhancement-mode GaN HEMT chip was packaged by silver-sintering die-bonding on direct-bond-copper substrate and encapsulation in a high-temperature polymer enclosure filled with nitrogen. Static characteristics of the packaged GaN device were measured at temperatures up to 250 °C. The threshold voltage of the transistor at 250 °C decreased to around 0.9 V, about 30% lower than that at room temperature. At temperatures beyond 150 °C, the saturation current fell sharply below the rated current, resulting in a rapid rise in the on-resistance versus current. At 250 °C, the saturation current decreased rapidly to around 67 A, <45% of the rated current. The reverse leakage also increased sharply at temperatures beyond 150 °C. Although the packaged device was operational at 250 °C, one would need to significantly lower the expectations for its performance and address the challenges of packaging and thermal management if it were to be used in a high-temperature power converter.

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号  京ICP备18003416号-3