InGaAs self-switching diode-based THz bridge rectifier-Reference-Cited by-同舟云学术

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InGaAs self-switching diode-based THz bridge rectifier

Published:2021-06-16 Issue:7 Volume:36 Page:075017
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Garg Sahil^ORCID,Kaushal Bipan,Kasjoo S R,Kumar Sanjeev^ORCID,Gupta Neena,Song Aimin^ORCID,Singh Arun K^ORCID

Funder

Science and Engineering Research Board

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1088/1361-6641/abffe0/pdf

Reference35 articles.

1. Analysis of rectifier operation;Schade;Proc. IRE,1943

2. High efficient bridge rectifiers in 100 MHz and 2.45 GHz bands;Ito,2014

3. Breaking the efficiency barrier for ambient microwave power harvesting with heterojunction backward tunnel diodes;Lorenz;IEEE Trans. Microw. Theory Tech.,2015

4. Efficient rectifier for wireless power transmission systems;Rotenberg;IEEE Trans. Microw. Theory Tech.,2020

5. A fully integrated HF RFID tag chip with LFSR-based light- weight tripling mutual authentication protocol;Lu;IEEE Access,2019

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1. Compact terahertz devices based on silicon in CMOS and BiCMOS technologies;Opto-Electronics Review;2024-01-03

2. MoS₂ Self-Switching Diode-Based Low Power Single and Three-Phase Bridge Rectifiers;IEEE Transactions on Nanotechnology;2024

3. InGaAs Self-Switching Diode With Suppressed Harmonics For High Frequency Applications;2023 International Conference on Microelectronics (ICM);2023-12-17

4. Silicon Self-Switching Diode (SSD) as a Full-Wave Bridge Rectifier in 5G Networks Frequencies;Sensors;2022-12-11

5. Simulation of Mos₂ based Asymmetric Nano-Channel Rectifier;2022 IEEE 22nd International Conference on Nanotechnology (NANO);2022-07-04

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