Simulation of Mos<sub>2</sub> based Asymmetric Nano-Channel Rectifier-Reference-Cited by-同舟云学术

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Simulation of Mos₂ based Asymmetric Nano-Channel Rectifier

Published:2022-07-04 Issue: Volume: Page:
ISSN:
Container-title:2022 IEEE 22nd International Conference on Nanotechnology (NANO)
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Author:

Garg Sahil¹,Sharma Bhavuk¹,Khanal Gaurav Mani¹,Gupta Neena¹,Singh Arun K.¹,Syal Rajat²,Kumar Sanjeev²,Kasjoo S. R.³

Affiliation:

1. Semiconductor Research Centre, Punjab Engineering College (Deemed to be University),Dept. of Electronics and Comm. Engg.,Chandigarh,India

2. Punjab Engineering College (Deemed to be University),Applied Sciences Department,Chandigarh,India

3. School of Microelectronic Engineering, Universiti Malaysia Perlis,Kangar,Malaysia

Funder

Science and Engineering Research Board (SERB)

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9928528/9928587/09928647.pdf?arnumber=9928647

Reference12 articles.

1. Modeling and Simulation of Graphene based Three Terminal Junction Rectifier;garg;Journal of Computational Electronics,2018

2. Graphene based ballistic rectifiers

3. Barrier inhomogeneity in microscale Pt/MoS2 Schottky barrier diode

4. Unidirectional electron flow in a nanometer-scale semiconductor channel: A self-switching device

5. RF characterization of unipolar nanorectifiers at zero bias

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. MoS₂ Self-Switching Diode-Based Low Power Single and Three-Phase Bridge Rectifiers;IEEE Transactions on Nanotechnology;2024

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