Study of third-order intercepts and nonlinear distortion level for S-H GaAs HEMTs
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
https://iopscience.iop.org/article/10.1088/1361-6641/ab8c53/pdf
Reference22 articles.
1. RF transistors: Recent developments and roadmap toward terahertz applications
2. Metamorphic GaAs HEMTs with fT of 200 GHz
3. Distortion Analysis of Analog Integrated Circuits
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Electrostatic, linearity and analogue/RF performance analysis of single heterojunction GaAs HEMT;Journal of Materials Science: Materials in Electronics;2024-01
2. A study of DC and RF transconductance for different technologies of HEMT at low and high temperatures;Journal of Materials Science: Materials in Electronics;2023-04
3. Experimental insight into the third‐order intercepts and nonlinear distortion of GaN HEMTs;International Journal of RF and Microwave Computer-Aided Engineering;2020-12-07
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