Strain compensation by relieving defects in SiGe channel for FinFET technologies-Reference-Cited by-同舟云学术

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Strain compensation by relieving defects in SiGe channel for FinFET technologies

Published:2020-07-13 Issue:8 Volume:35 Page:085022
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Prieto-Depedro M^ORCID,Martin-Bragado I

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1088/1361-6641/ab8704/pdf

Reference21 articles.

1. Random dopant induced threshold voltage lowering and fluctuations in sub-0.1 μm MOSFET's: A 3-D "atomistic" simulation study

2. Metrology for the next generation of semiconductor devices

3. Beyond silicon: Strained-SiGe channel FinFETs

4. A manufacturable dual channel (Si and SiGe) high-k metal gate CMOS technology with multiple oxides for high performance and low power applications

5. 2^nd Generation dual-channel optimization with cSiGe for 22nm HP technology and beyond

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Improvement of Drive Currents of FinFET using Strained Si Technology;Journal of The Institution of Engineers (India): Series B;2021-07-20

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