Low voltage & controlled switching of MoS2-GO resistive layers based ReRAM for non-volatile memory applications
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://iopscience.iop.org/article/10.1088/1361-6641/ab2c09/pdf
Reference57 articles.
1. Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges
2. Memristors: Devices, Models, and Applications [Scanning the Issue]
3. Resistance random access memory
4. Fault tolerance in neuromorphic computing systems
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2. Electro-Optically Tunable Passivated Double-Cation Perovskite-Based ReRAM for Low-Power Memory Applications;ACS Applied Electronic Materials;2024-03-18
3. Reliable Memristive Switching Empowered by Ag/NiO/W ReRAM Configuration for Multi‐Level Non‐Volatile Memory Applications;Advanced Electronic Materials;2024-01-17
4. Flexible SnO2–MoS2 based memristive device exhibiting stable and enhanced memory phenomenon;Journal of Physics D: Applied Physics;2023-12-12
5. Evaluation of Nanostructured NiS2 Thin Films from a Single-Source Precursor for Flexible Memristive Devices;ACS Omega;2023-11-21
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