The effect of different oxygen exchange layers on TaOxbased RRAM devices
Author:
Funder
Air Force Research Laboratory
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://iopscience.iop.org/article/10.1088/1361-6641/aa9a8f/pdf
Reference20 articles.
1. Resistive switching phenomena: A review of statistical physics approaches
2. Negative voltage modulated multi-level resistive switching by using a Cr/BaTiOx/TiN structure and quantum conductance through evidence of H2O2 sensing mechanism
3. Understanding of multi-level resistive switching mechanism in GeOx through redox reaction in H2O2/sarcosine prostate cancer biomarker detection
4. Pulse width and height modulation for multi-level resistance in bi-layer TaOx based RRAM
5. Flow-based computing on nanoscale crossbars: Design and implementation of full adders
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