Clarifying the switching layer transformation through analysis of an abnormal I–V curves with increasing set compliance current in oxide-based resistive random access memory
Author:
Funder
Ministry of Science and Technology, Taiwan
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
https://iopscience.iop.org/article/10.35848/1882-0786/ac200c/pdf
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1. In situ click chemistry generation of cyclooxygenase-2 inhibitors
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3. Nonvolatile Programmable Switch With Adjacently Integrated Flash Memory and CMOS Logic for Low-Power and High-Speed FPGA
4. Resistive switching memories based on metal oxides: mechanisms, reliability and scaling
5. Advances of RRAM Devices: Resistive Switching Mechanisms, Materials and Bionic Synaptic Application
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