Turn-on dynamics and control efficiency of low-voltage AlGaAs/GaAs/InGaAs lasers-thyristors (905 nm) under optical activation of p-GaAs base with external light (1068 nm)-Reference-Cited by-同舟云学术

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Turn-on dynamics and control efficiency of low-voltage AlGaAs/GaAs/InGaAs lasers-thyristors (905 nm) under optical activation of p-GaAs base with external light (1068 nm)

Published:2019-05-21 Issue:6 Volume:34 Page:065025
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Gavrina P S^ORCID,Podoskin A A,Romanovich D N,Golovin V S^ORCID,Veselov D A,Slipchenko S O,Pikhtin N A,Bagaev T A,Ladugin M A,Marmalyuk A A,Simakov V A

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://iopscience.iop.org/article/10.1088/1361-6641/ab1c0a/pdf

Reference29 articles.

1. A study of epitaxially stacked tunnel-junction semiconductor lasers grown by MOCVD

2. Progress in efficiency-optimized high-power diode lasers

3. 940-nm Broad Area Diode Lasers Optimized for High Pulse-Power Fiber Coupled Applications

4. Saturation of light – current characteristics of high-power lasers (λ = 1.0 – 1.1 mm) in pulsed regime

5. Effect of laser cavity parameters on saturation of light – current characteristics of high-power pulsed lasers

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