A p-Si/n-GaN diode fabricated by nanomembrane lift-off and transfer-print technique-Reference-Cited by-同舟云学术

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A p-Si/n-GaN diode fabricated by nanomembrane lift-off and transfer-print technique

Published:2019-09-24 Issue:10 Volume:34 Page:105023
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Liu Yang^ORCID,Wang Lai,Wang Lei,Wu Xingzhao,Hao Zhibiao,Yu Jiadong,Luo Yi,Sun Changzheng,Han Yanjun,Xiong Bing,Wang Jian,Li Hongtao

Funder

National Key Research and Development Program

S&T Challenging Project

National Natural Science Foundation of China

China Postdoctoral Science Foundation

Beijing National Research Center for Information Science and Technology

Tsinghua University Initiative Scientific Research Program

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://iopscience.iop.org/article/10.1088/1361-6641/ab408b/pdf

Reference36 articles.

1. Exciton Regeneration at Polymeric Semiconductor Heterojunctions

2. Light-emitting transistor: Light emission from InGaP/GaAs heterojunction bipolar transistors

3. Graphene/Si-Quantum-Dot Heterojunction Diodes Showing High Photosensitivity Compatible with Quantum Confinement Effect

4. Epitaxial growth and band alignment of p-NiO/n-Fe2O3 heterojunction on Al2O3(0 0 0 1)

5. Influence of 4H-SiC substrate miscut on the epitaxy and microstructure of AlGaN/GaN heterostructures

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1. Effects of UV/O3 and O2 plasma surface treatments on the band-bending of ultrathin ALD-Al2O3 coated Ga-polar GaN;Journal of Applied Physics;2024-03-19

2. Synthesis and Characteristics of Transferrable Single‐Crystalline AlN Nanomembranes;Advanced Electronic Materials;2023-03-04

3. Printed Electronics Based on 2D Material Inks: Preparation, Properties, and Applications toward Memristors;Small Methods;2023-01-06

4. Low contact-resistivity and high-uniformity Ni/Au ohmic contacts on Si nanomembranes grafted to Si substrates via low-temperature rapid thermal annealing;Materials Science in Semiconductor Processing;2022-11

5. Single‐Crystalline Ge ₁₋ _x Sn _x /Si p–n Heterojunction Photodiodes with Sn Compositions up to 10%;Advanced Materials Technologies;2022-10-03

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