Effects of selective area intermixing on InAlGaAs multiple quantum well laser diode
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://iopscience.iop.org/article/10.1088/1361-6641/aaf439/pdf
Reference16 articles.
1. High-performance uncooled 1.3-μm Al/sub x/Ga/sub y/In/sub 1-x-y/As/InP strained-layer quantum-well lasers for subscriber loop applications
2. Integration of AlInGaAs-MQW Fabry–Pérot Lasers With Emission at Two Wavelength Ranges via Quantum-Well Intermixing
3. Theory and experiment of In/sub 1-x/Ga/sub x/As/sub y/P/sub 1-y/ and In/sub 1-x-y/Ga/sub x/Al/sub y/As long-wavelength strained quantum-well lasers
4. Design and characterization of 1.3-μm AlGaInAs-InP multiple-quantum-well lasers
5. Controllable red and blue bandgap energy shifted LEDs and modulators on InGaAsP quantum well platform
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2. Effects of external electric and magnetic field on the nonlinear optical rectification, second, and third-harmonic generations in GaAs/AlGaAs asymmetric triple quantum well;The European Physical Journal Plus;2023-07-31
3. Effect of n- and p-Doping on Vacancy Formation in Cationic and Anionic Sublattices of (In,Al)As/AlAs and Al(Sb,As)/AlAs Heterostructures;Nanomaterials;2023-07-23
4. The nonlinear optical properties of "12-6" tuned GaAs/GaAlAs double quantum well under the external fields;The European Physical Journal Plus;2023-02-22
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