2 W mm−1 power density of an AlGaN/GaN HEMT grown on free-standing GaN substrate at 40 GHz
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://iopscience.iop.org/article/10.1088/1361-6641/ab4e74/pdf
Reference19 articles.
1. High-power AlGaN/GaN HEMTs for Ka-band applications
2. High-temperature performance of AlGaN/GaN HFETs on SiC substrates
3. Ka-Band MMIC Using AlGaN/GaN-on-Si With Recessed High- Dual MIS Structure
4. High-Quality 2'' Bulk-Like Free-Standing GaN Grown by HydrideVapour Phase Epitaxy on a Si-doped Metal Organic Vapour Phase Epitaxial GaN Template with an Ultra Low Dislocation Density
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