2 W mm−1 power density of an AlGaN/GaN HEMT grown on free-standing GaN substrate at 40 GHz
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://iopscience.iop.org/article/10.1088/1361-6641/ab4e74/pdf
Reference19 articles.
1. High-power AlGaN/GaN HEMTs for Ka-band applications
2. High-temperature performance of AlGaN/GaN HFETs on SiC substrates
3. Ka-Band MMIC Using AlGaN/GaN-on-Si With Recessed High- Dual MIS Structure
4. High-Quality 2'' Bulk-Like Free-Standing GaN Grown by HydrideVapour Phase Epitaxy on a Si-doped Metal Organic Vapour Phase Epitaxial GaN Template with an Ultra Low Dislocation Density
Cited by 10 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Design and Analysis of a 50GHz InP DHBT Class-E Power Amplifier Providing 2.3 mW/µm2;2023 18th European Microwave Integrated Circuits Conference (EuMIC);2023-09-18
2. Effect of Local Substrate Removal and Backside Al Heat Dissipation Layer on GaN-on-Si Device RF Performance;ECS Journal of Solid State Science and Technology;2023-09-01
3. Performance improvement with non-alloyed ohmic contacts technology on AlGaN/GaN High Electron Mobility Transistors on 6H-SiC substrate;Microelectronic Engineering;2023-05
4. Thermal conductivity of wurtzite gallium nitride;Proceedings of the National Academy of Sciences of Belarus, Physical-Technical Series;2022-10-08
5. Small-Signal Analysis of Double-Channel AlGaN/GaN HEMT and MOSHEMT with Undoped Barrier for Microwave Applications;Journal of Electronic Materials;2022-05-15
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3