Simulation study of a novel thin layer SOI carrier-stored TLIGBT with self-biased pMOS-Reference-Cited by-同舟云学术

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Simulation study of a novel thin layer SOI carrier-stored TLIGBT with self-biased pMOS

Published:2019-10-03 Issue:11 Volume:34 Page:115005
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Yi Bo^ORCID,Lin Jia,Hu Huan,Wu Jiayu,Yang RuiFeng,Kong MouFu,Li Ping,Chen XingBi

Funder

the National Natural Science Foundation of China

the Open Foundation of State Key Laboratory of Electronic Thin Films and Integrated Devices

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://iopscience.iop.org/article/10.1088/1361-6641/ab400f/pdf

Reference21 articles.

1. Lateral insulated gate bipolar transistor (LIGBT) structure based on partial isolation SOI technology

2. 650V SOI LIGBT for Switch-Mode Power Supply Application

3. SOI LIGBT devices with a dual P-well implant for improved latching characteristics

4. Comparison of DI and JI lateral IGBTs

5. High-Voltage Integrated Circuits: History, State of the Art, and Future Prospects

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