Influence of Be doping placement in InAs/GaSb superlattice-based absorber on the performance of MWIR photodiodes-Reference-Cited by-同舟云学术

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Influence of Be doping placement in InAs/GaSb superlattice-based absorber on the performance of MWIR photodiodes

Published:2017-04-04 Issue:5 Volume:32 Page:055010
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Czuba K,Sankowska I,Jureńczyk J,Jasik A,Papis-Polakowska E,Kaniewski J

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0268-1242/32/i=5/a=055010/pdf

Reference31 articles.

1. Multispectral imaging with type II superlattice detectors

2. High operating temperature interband cascade midwave infrared detector based on type-II InAs/GaSb strained layer superlattice

3. InAs/GaSb Type-II Superlattice Detectors

4. State-of-the-art MCT IR-modules with enhanced long term and cycle stability

5. Vertical minority carrier electron transport in p-type InAs/GaSb type-II superlattices

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1. Emerging Type‐II Superlattices of InAs/InAsSb and InAs/GaSb for Mid‐Wavelength Infrared Photodetectors;Advanced Photonics Research;2021-12-15

2. The Role of Noise in Specific Detectivity of InAs/GaSb Superlattice MWIR Bariodes;Sensors;2021-10-22

3. Indium-Based Micro-Bump Array Fabrication Technology with Added Pre-Reflow Wet Etching and Annealing;Materials;2021-10-21

4. A Study of Defects in InAs/GaSb Type-II Superlattices Using High-Resolution Reciprocal Space Mapping;Materials;2021-08-30

5. The impact of mesa etching method on IR photodetector current-voltage characteristics;Materials Science in Semiconductor Processing;2020-11

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