Abstract
Abstract
The paper presents the development of a GaN DC–DC power converter with a pre-driver module and power device based on a monolithic integrated GaN E/D-mode metal–insulator–semiconductor high electron mobility transistors (MIS-HEMTs) platform. The pre-driver module with direct coupled field effect transistor logic circuit structure has been monolithically integrated with a GaN power transistor on a Si-based AlGaN/GaN commercial epitaxial wafer. The MIS-HEMTs structure adopts an insulated gate dielectric layer to suppress the leakage current and increase gate voltage robustness. The GaN-based floating buck converter employs a 1 mH inductor and a 9 μF capacitor to achieve 35 V–5 V power conversion. As a result, the pre-driver module is capable of delivering a 10 V driving voltage. GaN monolithic integration of the pre-driver module and power device can reduce the system area in the DC–DC application, which allows for an integrated chip size of 1.8 mm2.
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials