Abstract
Abstract
InGaZnO high-voltage thin-film transistors (HV-TFTs) with vertical dual-active-layer structure and lateral offset design were fabricated at low temperature. The TFT features such as sub-threshold swing, threshold voltage, and hysteresis voltage are similar to those of the normal devices; furthermore, they are independent of the offset length. The blocking voltage of HV-TFTs with an offset of 10 μm is 406 ± 17 V while the ON/OFF ratio reaches 109 at
V
DS
=
10
V
.
Funder
National Natural Science Foundation of China
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Cited by
8 articles.
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