Funder
International Consortium of Nanotechnologies
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference52 articles.
1. Fabrication and characterization of vertically stacked gate-all-around Si nanowire FET arrays;Sacchetto,2009
2. Scalability of InGaAs gate-all-around FET integrated on 300mm Si platform: demonstration of channel width down to 7nm and l g down to 36nm;Zhou,2016
3. A junctionless gate-all-around silicon nanowire FET of high linearity and its potential applications;Wang;IEEE Electron Device Lett.,2013
4. Top–down fabrication of gate-all-around vertically stacked silicon nanowire FETs with controllable polarity;De Marchi;IEEE Trans. Nanotechnol.,2014
5. Power aware FinFET and lateral nanosheet FET targeting for 3nm CMOS technology;Yakimets,2017