Reducing off-state leakage current in dopingless transistor employing dual metal drain
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://iopscience.iop.org/article/10.1088/1361-6641/ab542b/pdf
Reference31 articles.
1. Nanowire transistors without junctions
2. Bulk Planar Junctionless Transistor (BPJLT): An Attractive Device Alternative for Scaling
3. Nanotube Junctionless FET: Proposal, Design, and Investigation
4. Analysis of Threshold Voltage Variability Due to Random Dopant Fluctuations in Junctionless FETs
5. Physically Based Evaluation of Electron Mobility in Ultrathin-Body Double-Gate Junctionless Transistors
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