Impact of core thickness and gate misalignment on rectangular core–shell based double gate junctionless field effect transistor
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
https://iopscience.iop.org/article/10.1088/1361-6641/ab6bb2/pdf
Reference36 articles.
1. Analysis of Short-Channel Effects in Junctionless DG MOSFETs
2. Device scaling limits of Si MOSFETs and their application dependencies
3. High dielectric permittivity impact on SOI Double-Gate Mosfet
4. FinFETs and Other Multi-Gate Transistors
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2. A pathway to improve short channel effects of junctionless based FET’s after incorporating technology boosters: a review;Engineering Research Express;2024-02-26
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4. Influence of deep level trap charges on the reliability of asymmetric doped double gate JunctionLess transistor (AD-DG-JLT);Microelectronics Reliability;2023-09
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