A study of electric transport in n- and p-type modulation-doped GaInNAs/GaAs quantum well structures under a high electric field
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://iopscience.iop.org/article/10.1088/1361-6641/aabc39/pdf
Reference27 articles.
1. Dilute nitride resonant cavity enhanced photodetector with internal gain for the λ ∼ 1.3 μm optical communications window
2. Characterization of temperature dependent operation of a GaInNAs-based RCEPD designed for 1.3 μm
3. 1.3 µm resonant-cavity InGaAs/GaAs quantum dot light-emitting devices
4. 1.3-μm GaInAsP/InP buried-ridge-structure laser and its monolithic integration with photodetector using reactive ion beam etching
5. GaInNAs-based Hellish-vertical cavity semiconductor optical amplifier for 1.3 μm operation
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1. Enhancement of light emission characteristic of a GaAs-based Gunn light emitting diode with a quasi-cavity;Materials Science in Semiconductor Processing;2024-01
2. Comprehensively analysis of hot electron transport in as-grown and thermally annealed n-type modulation-doped Al0.15Ga0.85As/GaAs0.96Bi0.4 quantum well structure;Materials Science in Semiconductor Processing;2023-02
3. Velocity-field characteristics of MgxZn1−xO/ZnO heterostructures;Journal of Computational Electronics;2023-01-12
4. Hot Electron Transport in N-Type Modulation-Doped Al0.15ga0.85as/Gaas0.96bi0.4 Quantum Well Structure;SSRN Electronic Journal;2022
5. Determination of the acoustic phonon-hot carriers interaction in n- and p-type modulation-doped GaInNAs/GaAs quantum wells;Physica B: Condensed Matter;2021-07
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