A new physical insight into the zero-temperature coefficient with self-heating in silicon-on-insulator fin field-effect transistors
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
https://iopscience.iop.org/article/10.1088/1361-6641/abd220/pdf
Reference26 articles.
1. High performance 14nm SOI FinFET CMOS technology with 0.0174µm2 embedded DRAM and 15 levels of Cu metallization
2. Comprehensive study of effective current variability and MOSFET parameter correlations in 14nm multi-fin SOI FINFETs
3. An Experimental Approach to Characterizing the Channel Local Temperature Induced by Self-Heating Effect in FinFET
4. Impact of Self-Heating on the Statistical Variability in Bulk and SOI FinFETs
5. Negative dynamic resistance in MOS devices
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1. Substrate BOX engineering to mitigate the self-heating induced degradation in nanosheet transistor;Microelectronics Journal;2022-11
2. Through-silicon-via induced stress-aware FinFET buffer sizing in 3D ICs;Semiconductor Science and Technology;2022-07-12
3. Assessing the analog/RF and linearity performances of FinFET using high threshold voltage techniques;Semiconductor Science and Technology;2022-04-08
4. Investigating the Impact of Self-Heating Effects on some Thermal and Electrical Characteristics of Dielectric Pocket Gate-all-around (DPGAA) MOSFETs;Silicon;2021-10-23
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