A comprehensive physics based surface potential and drain current model for SiGe channel dual programmable FETs

Abstract

Abstract In the present work, a comprehensive analytical model for surface potential and drain current has been developed for double gate silicon-germanium channel dual programmable FETs (SiGe-DP-FET) which is capable to conduct both in n- as well as p-modes. The developed model accurately predicts the impact of mole fraction (m) variation in Si(1 − m)Ge m channel on various device characteristics such as energy band, surface potential, electric field, drain current, and transconductance. While deriving the surface potential expression, the active SiGe channel is bifurcated in three regions such that regions I and III denote the two gated regions while region II denotes the ungated region. Further, in order to compute the expression for surface potential, 2D Poisson’s equation has been solved in gated regions while linear approximation has been applied in ungated region and subsequently, the drain current expression has been obtained by integrating the band-to-band generation rate of charge carriers across the source side Schottky junctions. Moreover, in order to validate the proposed model, the analytical results are compared and verified with 2D TCAD ATLAS simulated results and it has been observed that the results obtained using proposed model match well with the simulated results.