Operation mode switchable charge-trap memory based on few-layer MoS2
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://iopscience.iop.org/article/10.1088/1361-6641/aaa79e/pdf
Reference23 articles.
1. Electric Field Effect in Atomically Thin Carbon Films
2. Nonvolatile Memory Cells Based on MoS2/Graphene Heterostructures
3. Controlled charge trapping by molybdenum disulphide and graphene in ultrathin heterostructured memory devices
4. Tunable Charge-Trap Memory Based on Few-Layer MoS2
5. Multibit Data Storage States Formed in Plasma-Treated MoS2 Transistors
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