Application of the Schottky diode as a detector of continuous terahertz radiation-Reference-Cited by-同舟云学术

Application of the Schottky diode as a detector of continuous terahertz radiation

Published:2021-03-01 Issue:1 Volume:1862 Page:012012
ISSN:1742-6588
Container-title:Journal of Physics: Conference Series
language:
Short-container-title:J. Phys.: Conf. Ser.

Author:

Badin A V,Moskalenko V D,Pidotova D A

Abstract

Abstract The results of research of the electrophysical and frequency characteristics of the semiconductor structure of a Schottky diode based on gallium arsenide are presented. The diode structure was modelled in the Sentaurus TCAD software package. A comparison of the current-voltage characteristics obtained by mathematical modeling and by experiment are presented. The frequency response in the range of 115-257 GHz is shown. The use of a Schottky diode as a continuous terahertz radiation detector is shown.

Publisher

IOP Publishing

Subject

General Physics and Astronomy

Link

https://iopscience.iop.org/article/10.1088/1742-6596/1862/1/012012/pdf

Reference18 articles.

1. Excellent thermal stability of cobaltaluminum alloy Schottky contacts on GaAs substrates

2. Metal-semiconductor contacts

3. Reactivity and interface chemistry during Schottky‐barrier formations: Metals on thin native oxides of GaAs investigated by x‐ray photoelectron spectroscopy

4. Photovoltaic effects in semi−insulating GaAs

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