Forms and concentration of adsorbed oxygen on the modified surface of SnO2

Abstract

Abstract Temperature dependence of oxygen concentration and forms on the undoped and doped semiconductor tin dioxide has been analyzed. It has been found that the main forms of oxygen at operation temperatures of most gas sensors are O – and 02–. When the parent oxide is doped with ions of greater Lewis force, the concentrations of all forms of surface oxygen increase. However, in all cases, defectiveness of semiconductor materials is the main contributor to gas sensitivity.