Author:
Mao Hua,Jiang Huaping,Hu Jiayu,Qiu Guanqun,Ran Li,Wu Yuping,Qin Han,Yang Minxiang
Abstract
Abstract
To reduce the power loss in a modular multilevel converter (MMC), hybrid switches with different combinations of Si-IGBT, SiC-MOSFET, Si-FRD and SiC-SBD in parallel or anti-parallel are comparatively investigated. By comparing the power losses in MMC submodule (SM) bridge arm switching devices, one bridge arm of a SM is replaced with a different switch configuration, while the other remains in the conventional Si-IGBT and FRD configuration. Itot
− Esw
and I - V curves are obtained for four switch configurations through SIMETRIX, and brought to SIMULINK simulation over longer time scales to account for the variable switch operating condition. Along with the simulation and experimental results, the loss differences under different switch configurations are verified, obtaining the optimal switch configuration at last, which is instructive for the selection of MMC SM in the future.
Subject
General Physics and Astronomy
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