Structure of an incommensurate 90° Si grain boundary resolved with the help of a Cs-corrector for illumination
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
http://stacks.iop.org/1742-6596/209/i=1/a=012041/pdf
Reference6 articles.
1. Quasicrystalline gold interface with a hypo-friction property
2. Accurate control of the misorientation angles in direct wafer bonding
3. Computer simulation of local order in condensed phases of silicon
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Incommensurate grain boundary in silicon and the silver-ratio sequence;Physical Review B;2019-09-05
2. Advanced semiconductor characterization with aberration corrected electron microscopes;Journal of Physics: Conference Series;2013-11-29
3. Atomic structures of Si and Ge Σ = 13 [0 0 1] tilt grain boundaries studied by high-resolution electron microscopy and atomistic simulations;Philosophical Magazine;2013-04
4. Application of the O-lattice theory for the reconstruction of the high-angle near 90° tilt Si(110)/(001) boundary created by wafer bonding;Acta Materialia;2012-02
5. Reconstruction of a High Angle Tilt (110)/(001) Boundary in Si Using O-lattice Theory;Solid State Phenomena;2011-08
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