Application of the O-lattice theory for the reconstruction of the high-angle near 90° tilt Si(110)/(001) boundary created by wafer bonding-Reference-Cited by-同舟云学术

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Application of the O-lattice theory for the reconstruction of the high-angle near 90° tilt Si(110)/(001) boundary created by wafer bonding

Published:2012-02 Issue:3 Volume:60 Page:1161-1173
ISSN:1359-6454
Container-title:Acta Materialia
language:en
Short-container-title:Acta Materialia

Author:

Cherkashin N.,Kononchuk O.,Reboh S.,Hÿtch M.

Publisher

Elsevier BV

Subject

Metals and Alloys,Polymers and Plastics,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Reference24 articles.

1. Structure of the GaAs/InP interface obtained by direct wafer bonding optimised for surface emitting optical devices

2. Dislocations as Active Components in Novel Silicon Devices

3. Amorphization/templated recrystallization method for changing the orientation of single-crystal silicon: An alternative approach to hybrid orientation substrates

4. Superglide at an Internal Incommensurate Boundary

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1. The β1 Triad-Related Configurations in a Mg-RE Alloy;Metallurgical and Materials Transactions A;2020-02-06

2. Heterostructural Interface Modelling;Materials Research Foundations;2019-10-25

3. Incommensurate grain boundary in silicon and the silver-ratio sequence;Physical Review B;2019-09-05

4. Tilt boundaries and associated solute segregation in a Mg–Gd alloy;Acta Materialia;2017-04

5. Secondary dislocation structures in a Ni–TiN system from the GMS and O-lattice theory;Physica E: Low-dimensional Systems and Nanostructures;2016-03

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