Temperature optimization of the Ti/Al/Ni/Au ohmic contact formation to the AlGaN/GaN heterostructure
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
http://stacks.iop.org/1742-6596/938/i=1/a=012072/pdf
Reference21 articles.
1. Investigation of the mechanism for Ohmic contact formation in Al and Ti/Al contacts ton-type GaN
2. Role of Ti/Al relative thickness in the formation mechanism of Ti/Al/Ni/Au Ohmic contacts to AlGaN/GaN heterostructures
3. Microstructural stability of ohmic contacts to InxGa1−xN
4. Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Enhancing the thermal stability of active contacts in AlGaN/GaN high electron mobility transistors with chemical vapor deposited carbon (C) films;Current Applied Physics;2024-11
2. Effects of multi-layer Ti/Al electrode and ohmic groove etching on ohmic characteristics of AlGaN/GaN HEMT devices;AIP Advances;2021-11-01
3. Comparative study of n-GaN transition group refractory metal Ohmic electrode;Acta Physica Sinica;2019
4. Electrophysical and Physical-Chemical Properties of Ohmic Contacts to III-N Compounds;Russian Physics Journal;2018-12
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