Author:
Zhidik Y S,Danilina T I,Chistoedova A A,Zhidik E V,Bitner L R
Abstract
Abstract
In this paper, we present the research results on the formation mechanism of stoichiometric compounds of complex thin films formed by ion-plasma sputtering in reactive gases environment. The kinetics of complex films’ formation and growth is studied as well as the change in characteristics of microelectronics elements formed on the basis of thin films during their electron-ion bombardment.
Subject
General Physics and Astronomy