Impact of asymmetric dielectric on the performance of TFET

Abstract

Abstract In this work first time we propose the dielectric modulated TFET model and observe the impact of asymmetry on different parameters like ON current, OFF current and intrinsic gate delay for a wide range of dielectric constant by simulation technique. We obtain satisfactory result for ON/OFF current as well as intrinsic delay by applying asymmetric dielectric. Our observation shows that by using the material of dielectric constant in the range of 5 to 20 at source side of TFET gives the best result for ON/OFF current as well as intrinsic delay.