Mechanism analysis of IGBT turn-on process

Author:

Yang Xiang,Lei Liu

Publisher

IOP Publishing

Subject

General Physics and Astronomy

Reference14 articles.

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2. Active clamping circuit threshold voltage design for series-connected HVIGBTs;Yu;Proceedings of the CSEE,2016

3. Research on a insulated gate bipolar transistor snubber circuit for the high power neutral point clamped three-level inverter;Meng;Proceedings of the CSEE,2016

4. A surgeless solid-state DC circuit breaker for voltage-source-converter-based HVDC systems [J];Sano;IEEE Transactions on Industry Applications,2014

5. Research on IGBT Module Electrical Model and real time simulation;Xu;Journal of North China Electric Power University,2016

Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Improved HVIGBT Transient Modeling Method Based on Hefner Model;2023 2nd Asia Power and Electrical Technology Conference (APET);2023-12-28

2. IGBT Overvoltage Protection Based on Dynamic Voltage Feedback and Active Clamping;Applied Sciences;2023-01-06

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